收藏本站

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N04KUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The NP88N04KUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
FEATURES
? Channel temperature 175 degree rating
? Super low on-state resistance
R DS(on) = 2.9 m ? MAX. (V GS = 10 V, I D = 44 A)
? Low C iss : C iss = 10000 pF TYP.
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C)
PART NUMBER
NP88N04KUG
PACKAGE
TO-263 (MP-25ZK)
(TO-263)
Drain to Source Voltage (V GS = 0 V)
Gate to Source Voltage (V DS = 0 V)
Drain Current (DC) (T C = 25 ° C)
V DSS
V GSS
I D(DC)
40
± 20
± 88
V
V
A
Drain Current (pulse)
Note1
I D(pulse)
± 352
A
Total Power Dissipation (T A = 25 ° C)
Total Power Dissipation (T C = 25 ° C)
Channel Temperature
Storage Temperature
P T1
P T2
T ch
T stg
1.8
200
175
? 55 to +175
W
W
° C
° C
Repetitive Avalanche Current
Repetitive Avalanche Energy
Note2
Note2
I AR
E AR
56
314
A
mJ
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2. T ch ≤ 150°C, V DD = 20 V, R G = 25 ? , V GS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R th(ch-C)
R th(ch-A)
0.75
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16855EJ1V0DS00 (1st edition)
Date Published June 2004 NS CP(K)
Printed in Japan
2004
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NP88N04NUG-S18-AY MOSFET N-CH 40V 88A TO-262
NP88N055KUG-E1-AY MOSFET N-CH 55V 88A TO-263
NP88N075MUE-S18-AY MOSFET N-CH 75V 88A TO-220
NP90N03VUG-E1-AY MOSFET N-CH 30V 90A TO-252
NP90N04MUG-S18-AY MOSFET N-CH 40A 90A TO-263
NP90N04VDG-E1-AY MOSFET N-CH TO-252
NP90N04VLG-E1-AY MOSFET N-CH TO-252
NP90N04VUG-E1-AY MOSFET N-CH TO-252
相关代理商/技术参数
NP88N04MHE 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET
NP88N04MHE-AY 制造商:Renesas Electronics Corporation 功能描述:
NP88N04MHE-S18-AY 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET
NP88N04NHE 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET
NP88N04NHE-S18-AY 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET
NP88N04NUG-S18-AY 功能描述:MOSFET N-CH 40V 88A TO-262 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
NP88N055CHE 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 88A I(D) | TO-220AB
NP88N055CHE-S12-AZ 制造商:NEC 制造商全称:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET